Integrated structure for an optoelectronic device

作者：Kenneth Eng Kian Lee | Yijing Chen | Li Zhang | Eugene A Fitzgerald

发明人：Kenneth Eng Kian Lee | Yijing Chen | Li Zhang | Eugene A Fitzgerald

所有人：Massachusetts Institute of Technology 年：2022,

语种：英语

公开国家：GB 国家：英国

专利申请号：GB2200311-5 专利申请日期：2020-06-24

公开(公告)号：GB-2600045-A 公开日期：2022-04-20

优先权号：SG102019060722019-06-28

分类号：H01L-25/16 国际主分类号：H01L-25/16 国际分类号：H01L-25/16 | G09F-9/00 | H01L-25/00 | H01L-27/00 | H01L-27/15 | H01L-33/00 | G09F-9/33 | H01L-27/146 | H01L-33/62

法律状态：Date of Art. 22/39 fulfilment of the PCT

摘要：Abstract Title: Integrated structure for an optoelectronic device and method of fabricating the sameAn integrated structure for an optoelectronic device and a method of fabricating an integrated structure for an optoelectronic device. The method comprises the steps of providing a complementary metal-oxide-semiconductor, CMOS, backplane comprising a driver circuit for the optoelectronic device; and providing a plurality of optical elements on the CMOS backplane, wherein the plurality of optical elements are based on a material system different from CMOS and are disposed in different device layers; wherein a first bonding dielectric is provided between the CMOS backplane and a first one of the different device layers for monolithic integration; and wherein a second bonding dielectric is provided between respective ones of the different device layers for monolithic integration, the second bonding dielectric being transparent.