LIGHT EMITTING DEVICE AND LIGHTING SYSTEM

2022-12-14  |  百检 190浏览

作者:PARK, Chan Keun | KIM, HYUNG JUN

申请者:Suzhou Lekin Semiconductor Co.,Ltd.

发明人:PARK, Chan Keun | KIM, HYUNG JUN 年:2022,

语种:英语

公开国家:KR 国家:韩国

专利申请号:KR10-2014-0111062 专利申请日期:2014-08-25

公开(公告)号:KR10-2352770B1 公开日期:2022-01-18

优先权号:KR20140111062 | 2014KR-0111062

分类号:H01L 33/14 20100101AFI20220118BHKR 国际主分类号:H01L 33/14 20100101AFI20220118BHKR 国际分类号:H01L-33/14 CPC分类号:H01L-033/025 | H01L-033/32 | F21Y-2115/10

法律状态:GRANTED

摘要:

Embodiments relate to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting system. A light emitting device according to an embodiment includes: a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; an AlxGayIn1-x-yAn Nlayer (where 0 < x ≦ 1 and 0 ≦ y ≦ 1) (122); an Nlayer (where 0 < x ≦ 1 and 0 ≦ y ≦ 1) (122); an AlxGayIn1-x-yUndoped Al on NlayerpGa1-pN layer (where 0 ≦ p < 1) (124); and n layer (where 0 ≦ p < 1) (where 0 ≦ p < 1) and said undoped AlpGa1-pAnd a second conductivity-type semiconductor layer on the Nlayer.