作者:PARK, Chan Keun | KIM, HYUNG JUN
申请者:Suzhou Lekin Semiconductor Co.,Ltd.
发明人:PARK, Chan Keun | KIM, HYUNG JUN 年:2022,
语种:英语
公开国家:KR 国家:韩国
专利申请号:KR10-2014-0111062 专利申请日期:2014-08-25
公开(公告)号:KR10-2352770B1 公开日期:2022-01-18
优先权号:KR20140111062 | 2014KR-0111062
分类号:H01L 33/14 20100101AFI20220118BHKR 国际主分类号:H01L 33/14
20100101AFI20220118BHKR 国际分类号:H01L-33/14 CPC分类号:H01L-033/025 | H01L-033/32 |
F21Y-2115/10
法律状态:GRANTED
摘要:
Embodiments relate to a light emitting device, a method of
manufacturing a light emitting device, a light emitting device package, and a
lighting system. A light emitting device according to an embodiment includes: a
first conductive semiconductor layer; an active layer on the first conductive
semiconductor layer; an AlxGayIn1-x-yAn Nlayer (where 0 < x ≦ 1 and 0 ≦ y ≦
1) (122); an Nlayer (where 0 < x ≦ 1 and 0 ≦ y ≦ 1) (122); an
AlxGayIn1-x-yUndoped Al on NlayerpGa1-pN layer (where 0 ≦ p < 1) (124); and n
layer (where 0 ≦ p < 1) (where 0 ≦ p < 1) and said undoped AlpGa1-pAnd a
second conductivity-type semiconductor layer on the Nlayer.